Journal
APPLIED PHYSICS LETTERS
Volume 103, Issue 13, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4822265
Keywords
-
Categories
Funding
- University of Hong Kong
- GRF
- HKSAR RGC [7036/12P]
- National Natural Science Foundation of China [61205037, 11204090, 2012B091000169]
- China Postdoctoral Science Foundation [2013M531862]
- Research Fund for the Doctoral Program of Higher Education of China [20124407120017]
Ask authors/readers for more resources
ZnO/Zn0.85Mg0.15O asymmetric double quantum well (ADQW) and multiple quantum well (MQW) were fabricated with plasma assisted molecular epitaxy on c-plane sapphire, with their optical properties and optical pumped lasing characteristics studied. Due to the good crystalline quality, the lasing threshold of the MQW is similar to 20 kW cm(-2). The widths of the narrow well (NW) and the wide well (WW) of the ADQW were chosen to fascinate rapid LO phonon assisted carrier tunneling from NW to WW, so as to enhance the exciton density at the WW. Very low lasing threshold of 6 kW cm(-2) has been achieved. (C) 2013 AIP Publishing LLC.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available
Share Paper
