High performance In2O3 thin film transistors using chemically derived aluminum oxide dielectric

We report high performance solution-deposited indium oxide thin film transistors with field-effect mobility of 127 cm(2)/Vs and an I-on/I-off ratio of 10(6). This excellent performance is achieved by controlling the hydroxyl group content in chemically derived aluminum oxide (AlOx) thin-film dielectrics. The AlOx films annealed in the temperature range of 250-350 degrees C showed higher amount of Al-OH groups compared to the films annealed at 500 degrees C, and correspondingly higher mobility. It is proposed that the presence of Al-OH groups at the AlOx surface facilitates unintentional Al-doping and efficient oxidation of the indium oxide channel layer, leading to improved device performance. (C) 2013 AIP Publishing LLC.