Journal
APPLIED PHYSICS LETTERS
Volume 102, Issue 19, Pages -Publisher
AIP Publishing
DOI: 10.1063/1.4806980
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Funding
- Office of Naval Research
- Design-for-Reliability Initiative for Future Technologies (DRIFT) MURI
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Simultaneous temperature-dependent measurements of resistance transients (RTs) and spatially resolved surface potential transients were made after bias switching on AlGaN/GaN high electron mobility transistors (HEMTs). We find an E-c - 0.57 eV trap, previously correlated with HEMT degradation, located in the GaN buffer and not in the AlGaN barrier or at the AlGaN surface. The amplitude of the E-c - 0.57 eV trap in RTs depends strongly on the Fe-concentration in the GaN buffer. Filling of this trap occurs only under bias conditions where electric fields penetrate into the GaN buffer. (C) 2013 AIP Publishing LLC.
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