Journal
APPLIED PHYSICS LETTERS
Volume 103, Issue 23, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4840316
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Funding
- CHIST-ERA ERA-Net, EPSRC [EP/J00801X/1, EP/K017829/1]
- EPSRC [EP/J00801X/2, EP/J00801X/1, EP/K017829/1] Funding Source: UKRI
- Engineering and Physical Sciences Research Council [EP/J00801X/1, EP/K017829/1, EP/J00801X/2] Funding Source: researchfish
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In this study, we exploit the non-zero crossing current-voltage characteristics exhibited by nanoscale TiO2 based solid-state memristors. We demonstrate that the effective resistance and capacitance of such two terminal devices can be modulated simultaneously by appropriate voltage pulsing. Our results prove that both resistive and capacitive switching arise naturally in nanoscale Pt/TiO2/Pt devices under an external bias, this behaviour being governed by the formation/disruption of conductive filaments through the TiO2 thin film. (C) 2013 AIP Publishing LLC.
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