Journal
APPLIED PHYSICS LETTERS
Volume 102, Issue 19, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4807425
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Funding
- Materials Research Science and Engineering Center (MRSEC) of Northwestern University [NSF DMR-1121262]
- Office of Naval Research [ONR N00014-11-1-0463]
- CAPES Scholarship [5456-11-8]
- W. M. Keck Science and Engineering Grant
- Division Of Materials Research
- Direct For Mathematical & Physical Scien [1121262] Funding Source: National Science Foundation
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Single-layer graphene structures and devices are commonly defined using reactive ion etching and plasma etching with O-2 or Ar as the gaseous etchants. Although optical microscopy and Raman spectroscopy are widely used to determine the appropriate duration of dry etching, additional characterization with atomic force microscopy (AFM) reveals that residual graphene and/or etching byproducts persist beyond the point where the aforementioned methods suggest complete graphene etching. Recognizing that incomplete etching may have deleterious effects on devices and/or downstream processing, AFM characterization is used here to determine optimal etching conditions that eliminate graphene dry etching residues. (C) 2013 AIP Publishing LLC.
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