4.6 Article

Graphene-insulator-graphene active plasmonic terahertz devices

Journal

APPLIED PHYSICS LETTERS
Volume 103, Issue 12, Pages -

Publisher

AMER INST PHYSICS
DOI: 10.1063/1.4821221

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Funding

  1. NSF MRSEC program at the University of Utah [DMR 1121252]

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This work theoretically explores the perspectives of stacked graphene-insulator-graphene layers as active terahertz devices. Out-of-plane resonant tunneling current between the graphene layers is shown to constitute a gain medium for electron-plasma-waves propagating in the plane of the graphene sheets. The interaction between both phenomena can lead to either stable THz amplification (with power gain >7 dB) or very sensitive terahertz detection (with sensitivity >10(5) V/W) under appropriate device configurations. (C) 2013 AIP Publishing LLC.

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