4.6 Article

>750 mV open circuit voltage measured on 50 μm thick silicon heterojunction solar cell

Journal

APPLIED PHYSICS LETTERS
Volume 103, Issue 5, Pages -

Publisher

AMER INST PHYSICS
DOI: 10.1063/1.4817723

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Funding

  1. Engineering Research Center Program of the National Science Foundation
  2. Office of Energy Efficiency, and Renewable Energy of the Department of Energy under NSF [EEC-1041895]

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This paper presents experimental evidence that silicon solar cells can achieve >750 mV open circuit voltage at 1 Sun illumination providing very good surface passivation is present. 753 mV local open circuit voltage was measured on a 50 mu m thick non-metalized silicon heterojunction solar cell. The paper also considers a recombination model at open circuit based on the recent Auger and radiative recombination parameterization and the measured surface saturation current density. The loss mechanisms at open circuit and several practical pathways to achieve >760 mV open circuit voltage in silicon heterojunction solar cells are discussed. (C) 2013 AIP Publishing LLC.

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