Journal
APPLIED PHYSICS LETTERS
Volume 103, Issue 24, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4847675
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Funding
- Scientific User Facilities Division, Office of Basic Energy Sciences, U. S. Department of Energy
- Office of Naval Research [N00014-11-1-0463]
- W. M. Keck Foundation Science and Engineering Grant
- Materials Research Science and Engineering Center (MRSEC) of Northwestern University [DMR-1121262]
- Direct For Mathematical & Physical Scien
- Division Of Materials Research [1121262] Funding Source: National Science Foundation
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Near-field scanning microwave microscopy (SMM) is used for non-destructive nanoscale characterization of Al2O3 and HfO2 films grown on epitaxial graphene on SiC by atomic layer deposition using a self-assembled perylene-3,4,9,10-tetracarboxylic dianhydride seeding layer. SMM allows imaging of buried inhomogeneities in the dielectric layer with a spatial resolution close to 100 nm. The results indicate that, while topographic features on the substrate surface cannot be eliminated as possible sites of defect nucleation, the use of a vertically heterogeneous Al2O3/ HfO2 stack suppresses formation of large outgrowth defects in the oxide film, ultimately improving lateral uniformity of the dielectric film. (C) 2013 AIP Publishing LLC.
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