Journal
APPLIED PHYSICS LETTERS
Volume 102, Issue 24, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4809815
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Funding
- Division of Materials Sciences and Engineering of the U.S. Department of Energy [De-Ac02-05Ch11231]
- Electronic Materials (E-Mat) program
- National Science Council [NSC 101-2112-M-007-015-MY3]
- NSF Energy Efficient Electronics Science Center
- World Class University program at Sunchon National University
- Office of Science, Office of Basic Energy Sciences of the U.S. Department of Energy [De-Ac02-05Ch11231]
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Here, we present the fabrication and electrical analysis of InAs/WSe2 van der Waals heterojunction diodes formed by the transfer of ultrathin membranes of one material upon another. Notably, InAs and WSe2 are two materials with completely different crystal structures, which heterojunction is inconceivable with traditional epitaxial growth techniques. Clear rectification from the n-InAs/p-WSe2 junction (forward/reverse current ratio >10(6)) is observed. A low reverse bias current <10(-12) A/mu m(2) and ideality factor of similar to 1.1 were achieved, suggesting near-ideal electrically active interfaces. (C) 2013 AIP Publishing LLC.
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