Related references
Note: Only part of the references are listed.Terahertz spectroscopy and imaging - Modern techniques and applications
Peter Uhd Jepsen et al.
LASER & PHOTONICS REVIEWS (2011)
THz generation at 1.55 μm excitation: six-fold increase in THz conversion efficiency by separated photoconductive and trapping regions
Roman J. B. Dietz et al.
OPTICS EXPRESS (2011)
Terahertz emission from metal-organic chemical vapor deposition grown Fe:InGaAs using 830 nm to 1.55 μm excitation
C. D. Wood et al.
APPLIED PHYSICS LETTERS (2010)
Terahertz emission characteristics of ErAs:InGaAs-based photoconductive antennas excited at 1.55 μm
A. Schwagmann et al.
APPLIED PHYSICS LETTERS (2010)
Next generation 1.5 μm terahertz antennas: mesa-structuring of InGaAs/InAlAs photoconductive layers
H. Roehle et al.
OPTICS EXPRESS (2010)
All-fiber terahertz time-domain spectrometer operating at 1.5 μm telecom wavelengths
B. Sartorius et al.
OPTICS EXPRESS (2008)
Fe-implanted InGaAs terahertz emitters for 1.56 μm wavelength excitation -: art. no. 051104
M Suzuki et al.
APPLIED PHYSICS LETTERS (2005)
THz radiation emission properties of multienergy arsenic-ion-implanted GaAs and semi-insulating GaAs based photoconductive antennas
TA Liu et al.
JOURNAL OF APPLIED PHYSICS (2003)
Ultrafast optical nonlinearity of low-temperature-grown GaInAs/AlInAs quantum wells at wavelengths around 1.55 μm
K Biermann et al.
APPLIED PHYSICS LETTERS (2002)
Share Paper
