Journal
APPLIED PHYSICS LETTERS
Volume 102, Issue 11, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4795858
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Funding
- Department of Energy Office of Basic Energy Sciences [DE-SC0006423]
- NSF GRFP
- Air Force Office of Scientific Research
- Office of Naval Research GATE MURI
- National Science Foundation [DMR-0819762, ECS-0335765]
- Harvards Center for Nanoscale Systems (CNS)
- U.S. Department of Energy (DOE) [DE-SC0006423] Funding Source: U.S. Department of Energy (DOE)
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When light is absorbed by a semiconductor, photoexcited charge carriers enhance the absorption of far-infrared radiation due to intraband transitions. We observe the opposite behavior in monolayer graphene, a zero-gap semiconductor with linear dispersion. By using time domain terahertz (THz) spectroscopy in conjunction with optical pump excitation, we observe a reduced absorption of THz radiation in photoexcited graphene. The measured spectral shape of the differential optical conductivity exhibits non-Drude behavior. We discuss several possible mechanisms that contribute to the observed low-frequency non-equilibrium optical response of graphene. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4795858]
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