Journal
APPLIED PHYSICS LETTERS
Volume 102, Issue 16, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4802794
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Funding
- National Natural Science Foundation of China [51002071]
- Program for New Century Excellent Talents in University
- Program for Young Talents of Science and Technology in Universities of Inner Mongolia Autonomous Region
- Innovation Program of Inner Mongolia University of Science and Technology [2011NCL035]
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1.8-mu m-(Pb0.97La0.02)(Zr0.95-xSnxTi0.05)O-3 antiferroelectric thick films with orthorhombic (x = 0.05 and 0.25) and tetragonal (x = 0.40) structure were deposited on platinum-buffered silicon substrates by using a chemical solution way. All the films had a uniform microstructure with pure perovskite phase. With increasing x value, dielectric constant and critical electric breakdown field of the thick films were gradually increased, while their saturated polarizations were decreased. As a result, their maximum recoverable energy-storage density was increased for the thick films with larger x values. A huge recoverable energy-storage density of 56 J/cm(3) was obtained in antiferroelectric thick films with x = 0.40. Moreover, a good temperature-dependent stability of the energy storage was obtained in the all films from 20 to 120 degrees C. (C) 2013 AIP Publishing LLC [http://dx.doi.org/10.1063/1.4802794]
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