Composition-dependent dielectric and energy-storage properties of (Pb,La)(Zr,Sn,Ti)O-3 antiferroelectric thick films

1.8-mu m-(Pb0.97La0.02)(Zr0.95-xSnxTi0.05)O-3 antiferroelectric thick films with orthorhombic (x = 0.05 and 0.25) and tetragonal (x = 0.40) structure were deposited on platinum-buffered silicon substrates by using a chemical solution way. All the films had a uniform microstructure with pure perovskite phase. With increasing x value, dielectric constant and critical electric breakdown field of the thick films were gradually increased, while their saturated polarizations were decreased. As a result, their maximum recoverable energy-storage density was increased for the thick films with larger x values. A huge recoverable energy-storage density of 56 J/cm(3) was obtained in antiferroelectric thick films with x = 0.40. Moreover, a good temperature-dependent stability of the energy storage was obtained in the all films from 20 to 120 degrees C. (C) 2013 AIP Publishing LLC [http://dx.doi.org/10.1063/1.4802794]