Journal
APPLIED PHYSICS LETTERS
Volume 102, Issue 15, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4802759
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Funding
- Semiconductor Research Corporation (SRC)
- Defense Advanced Research Project Agency (DARPA) through STARnet Center for Function Accelerated nanoMaterial Engineering (FAME)
- National Science Foundation (NSF) Project [US EECS-1128304, EECS-1124733, EECS-1102074]
- US NSF under I/UCRC CONNECTION ONE at RPI
- NSF EAGER program
- Russian Fund for Basic Research (RFBR) [11-02-00013]
- Direct For Computer & Info Scie & Enginr [1217382] Funding Source: National Science Foundation
- Division of Computing and Communication Foundations [1217382] Funding Source: National Science Foundation
- Div Of Electrical, Commun & Cyber Sys
- Directorate For Engineering [1128304] Funding Source: National Science Foundation
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We investigated experimentally the effect of the electron-beam irradiation on the level of the low-frequency 1/f noise in graphene devices. It was found that 1/f noise in graphene reduces with increasing concentration of defects induced by irradiation. The increased amount of structural disorder in graphene under irradiation was verified with micro-Raman spectroscopy. The bombardment of graphene devices with 20-keV electrons reduced the noise spectral density, S-I/I-2 (I is the source-drain current) by an order-of magnitude at the radiation dose of 10(4) mu C/cm(2). We analyzed the observed noise reduction in the limiting cases of the mobility and carrier number fluctuation mechanisms. The obtained results are important for the proposed graphene applications in analog, mixed-signal, and radio-frequency systems, integrated circuits and sensors. (C) 2013 AIP Publishing LLC [http://dx.doi.org/10.1063/1.4802759]
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