Journal
APPLIED PHYSICS LETTERS
Volume 102, Issue 1, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4774400
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Funding
- Ministry of Science and Technology of China through the National Key Technology Support Program [2009BAG12A07]
- National Natural Science Foundation of China [61150110485]
- Zhejiang Province Innovation Group Program [2011R09010]
- Natural Science Foundation [Z1110168]
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ZnO films deposited by plasma-enhanced atomic layer deposition (PEALD) have been used to investigate resistive memory behavior. The bipolar resistance switching properties were observed in the Al/PEALD-ZnO/Pt devices. The resistance ratio for the high and low resistance states (HRS/LRS) is more than 10(3), better than ZnO devices deposited by other methods. The dominant conduction mechanisms of HRS and LRS are trap-controlled space charge limited current and Ohmic behavior, respectively. The resistive switching behavior is induced upon the formation/disruption of conducting filaments. This study demonstrated that the PEALD-ZnO films have better properties for the application in 3D resistance random access memory. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4774400]
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