Journal
APPLIED PHYSICS LETTERS
Volume 103, Issue 5, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4817086
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Funding
- Hundred Talent Program of the Chinese Academy of Sciences
- National Natural Science Foundation of China [61205025, 11274304, 11204298]
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Deep-blue, high color purity electroluminescence (EL) is demonstrated in an inverted light-emitting device using nontoxic ZnSe/ZnS core/shell quantum dots (QDs) as the emitter. The device exhibits moderate turn-on voltage (4.0V) and color-saturated deep blue emission with a narrow full width at half maximum of similar to 15nm and emission peak at 441 nm. Their maximum luminance and current efficiency reach 1170 cd/m(2) and 0.51 cd/A, respectively. The high performances are achieved through a ZnO nanoparticle based electron-transporting layer due to efficient electron injection into the ZnSe/ZnS QDs. Energy transfer processes between the ZnSe/ZnS QDs and hole-transporting materials are studied by time-resolved photoluminescence spectroscopy to understand the EL mechanism of the devices. These results provide a new guide for the fabrication of efficient deep-blue quantum dot light-emitting diodes and the realization of QD-based lighting sources and full-color panel displays. (C) 2013 AIP Publishing LLC.
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