Journal
APPLIED PHYSICS LETTERS
Volume 103, Issue 14, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4824205
Keywords
-
Categories
Funding
- NSF [CMMI-1232883]
- Open-Lab program of the Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences [12ZD05]
- Directorate For Engineering [1232883] Funding Source: National Science Foundation
- Div Of Civil, Mechanical, & Manufact Inn [1232883] Funding Source: National Science Foundation
Ask authors/readers for more resources
We present a method for making stable MoS2 rectifying diodes using selected-area plasma treatment. The transport and X-ray photoelectron spectroscopic characterizations of MoS2 transistors treated with different plasmas confirm that the rectifying characteristics of MoS2 diodes are attributed to plasma-induced p-doping and p-n junctions in MoS2. Such plasma-doped diodes exhibit high forward/reverse current ratios (similar to 10(4) for SF6-treated diodes) and a superior long-term stability. They can play an important role in the development of nanoelectronic devices. In addition, the presented plasma-assisted doping process could be also used for making ambipolar MoS2 transistors and functionalizing other emerging two-dimensional materials. (C) 2013 AIP Publishing LLC.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available
Share Paper
