Journal
APPLIED PHYSICS LETTERS
Volume 102, Issue 14, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4801765
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Funding
- National Basic Research Program of China [2013CB632804, 2011CB301900, 2012CB3155605]
- National Natural Science Foundation of China [61176015, 61210014, 51002085, 61176059]
- High Technology Research and Development Program of China [2011AA03A112, 2011AA03A106, 2011AA03A105]
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By using an alumination process of Si3N4 at high temperature with aluminum flux irradiation for sufficient time, homogeneously N-polar and atomically smooth AlN film has been realized on silicon substrate with inversion domain suppressed to less than 3.0 x 10(6) cm(-2) and root mean square surface roughness of similar to 0.4 nm. A general interface model is proposed to explain the mechanism of polarity determination. The sharp AlN(0001)/Si(111) interface exhibits 5:4 coincidence domain matching, resulting in an almost fully relaxed AlN film. (C) 2013 AIP Publishing LLC.
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