Journal
APPLIED PHYSICS LETTERS
Volume 103, Issue 24, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4846555
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Funding
- U.S. National Science Foundation [ECCS-1232184]
- National Major Basic Research Projects [2011CB925603]
- 863 Program of China [2011AA010205]
- Natural Science Foundation of China [91221201, 61234005, 11074167]
- Div Of Electrical, Commun & Cyber Sys
- Directorate For Engineering [1232184] Funding Source: National Science Foundation
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An InAs/GaAs quantum dot infrared photodetector (QDIP) based on p-type valence-band intersublevel hole transitions as opposed to conventional electron transitions is reported. Two response bands observed at 1.5-3 and 3-10 mu m are due to transitions from the heavy-hole to spin-orbit split-off QD level and from the heavy-hole to heavy-hole level, respectively. Without employing optimized structures (e. g., the dark current blocking layer), the demonstrated QDIP displays promising characteristics, including a specific detectivity of 1:8 x 10(9) cm . Hz(1/2)/W and a quantum efficiency of 17%, which is about 5% higher than that of present n-type QDIPs. This study shows the promise of utilizing hole transitions for developing QDIPs. (C) 2013 AIP Publishing LLC.
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