Journal
APPLIED PHYSICS LETTERS
Volume 102, Issue 18, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4804643
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Funding
- Ministry of Science and Technology of China [2011CB921904]
- National Natural Science Foundation of China [60971003]
- National Institute of Standards and Technology
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We report reduced contact resistance of single-layer graphene devices by using ultraviolet ozone treatment to modify the metal/graphene contact interface. The devices were fabricated from mechanically transferred, chemical vapor deposition grown single layer graphene. Ultraviolet ozone treatment of graphene in the contact regions as defined by photolithography and prior to metal deposition was found to reduce interface contamination originating from incomplete removal of poly(methyl-methacrylate) and photoresist. Our control experiment shows that exposure times up to 10 min did not introduce significant disorder in the graphene as characterized by Raman spectroscopy. By using the described approach, contact resistance of less than 200 Omega mu m was achieved for 25 min ultraviolet ozone treatment, while not significantly altering the electrical properties of the graphene channel region of devices. (C) 2013 AIP Publishing LLC.
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