Journal
APPLIED PHYSICS LETTERS
Volume 103, Issue 2, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4813471
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Funding
- Engineering and Physical Sciences Research Council [EP/H047816/1]
- NSF Materials World Network [1008480]
- National Science Foundation [ECS-0335765]
- Australian Research Council [DE130100592]
- EPSRC [EP/H047816/1] Funding Source: UKRI
- Engineering and Physical Sciences Research Council [EP/H047816/1] Funding Source: researchfish
- Direct For Mathematical & Physical Scien
- Division Of Materials Research [1008480] Funding Source: National Science Foundation
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InGaN-based active layers within microcavity resonators offer the potential of low threshold lasers in the blue spectral range. Here, we demonstrate optically pumped, room temperature lasing in high quality factor GaN microdisk cavities, containing InGaN quantum dots (QDs) with thresholds as low as 0.28 mJ/cm(2). The demonstration of lasing action from GaN microdisk cavities with QDs in the active layer, provides a critical step for the nitrides in realizing low threshold photonic devices with efficient coupling between QDs and an optical cavity (C) 2013 AIP Publishing LLC.
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