Journal
APPLIED PHYSICS LETTERS
Volume 102, Issue 22, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4809582
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Funding
- National Major Research Program of China [2013CB932600]
- Program of International ST Cooperation [2012DFA50990]
- NSFC [51232001, 51172022]
- Beijing Municipal Commission of Education
- Fundamental Research Funds for the Central Universities, Program for Changjiang Scholars and Innovative Research Team in University
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Saturated electroluminescence behavior was observed in single ZnO micro/nanowire and GaN film heterojunctions fabricated by transferring an individual ZnO micro/nanowire onto p-type GaN substrate. A strong blue emission of similar to 460 nm was observed, as a result of interfacial radiative recombination of electrons from n-ZnO and holes from p-GaN. Light-output-current characteristic followed a power law of L similar to I-m, which revealed a superlinear dependence at low current (m = 1.16) and became sublinear (m = 0.72) at high current. According to theoretical analysis, the saturated electroluminescence at high current could be attributed to the saturation of nonradiative recombination and the limitation of electrical-to-optical conversion efficiency. (C) 2013 AIP Publishing LLC.
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