Journal
APPLIED PHYSICS LETTERS
Volume 102, Issue 18, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4804575
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Funding
- Army Research Laboratory [W911NF-04-D-0003]
- William Clark program monitor
- NSF [DMR-1108071]
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The control of the polarity of metalorganic chemical vapor deposition grown AlN on sapphire is demonstrated. Al-polar and N-polar AlN is grown side-by-side yielding a lateral polarity structure. Scanning electron microscopy measurements reveal a smooth surface for the Al-polar and a relatively rough surface for the N-polar AlN domains. Transmission electron microscopy shows mixed edge-screw type dislocations with polarity-dependent dislocation bending. Raman spectroscopy reveals compressively strained Al-polar and relaxed N-polar domains. The near band edge luminescence consists of free and bound excitons which are broadened for the Al-polar AlN. Relaxation, better optical quality, and dislocation bending in the N-polar domains are explained by the columnar growth mode. (C) 2013 AIP Publishing LLC.
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