Low resistance GaN/InGaN/GaN tunnel junctions

Enhanced interband tunnel injection of holes into a p-n junction is demonstrated using p-GaN/InGaN/n-GaN tunnel junctions with a specific resistivity of 1.2 x 10(-4) Omega cm(2). The design methodology and low-temperature characteristic of these tunnel junctions are discussed, and insertion into a p-n junction device is described. Applications of tunnel junctions in III-nitride optoelectronics devices are explained using energy band diagrams. The lower bandgap and polarization fields reduce tunneling barrier, eliminating the need for ohmic contacts to p-type GaN. This demonstration of efficient tunnel injection of carriers in III-nitrides can lead to a replacement of existing resistive p-type contact material in light emitters with tunneling contact layers requiring very little metal footprint on the surface, resulting in enhanced light extraction. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4796041]