Journal
APPLIED PHYSICS LETTERS
Volume 103, Issue 6, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4818463
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Funding
- Singapore MOE [R143-000-505-112, R143-000-530-112, R143-000-542-112]
- NUS-YIA Grant [R143-000-452-101]
- Singapore National Research Foundation under the Campus for Research Excellence and Technological Enterprise (CREATE) programme
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In situ bottom-gated molybdenum disulfide (MoS2) field effect transistors (FETs) device characterization and in situ ultraviolet photoelectron spectroscopy and x-ray photoelectron spectroscopy measurements were combined to investigate the effect of surface modification layers of C-60 and molybdenum trioxide (MoO3) on the electronic properties of single layer MoS2. It is found that C-60 decoration keeps MoS2 FET performance intact due to the very weak interfacial interactions, making C-60 as an ideal capping layer for MoS2 devices. In contrast, decorating MoO3 on MoS2 induces significant charge transfer at the MoS2/MoO3 interface and largely depletes the electron charge carriers in MoS2 FET devices. (C) 2013 AIP Publishing LLC.
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