Journal
APPLIED PHYSICS LETTERS
Volume 103, Issue 17, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4822175
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- Grants-in-Aid for Scientific Research [24860018] Funding Source: KAKEN
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Amorphous metal oxide thin-film transistors (TFTs) are fabricated using InOx-based semiconductors doped with TiO2, WO3, or SiO2. Even at low-dopant densities, the electrical properties of the film strongly depend on the dopant used. We found that this dependence could be reasonably explained by differences in the bond-dissociation energy of the dopants. By incorporating a dopant with a higher bond-dissociation energy, the film became less sensitive to the partial pressure of oxygen used during sputtering and remained electrically stable upon thermal annealing. Thus, choosing a dopant with an appropriate bond-dissociation energy is important when fabricating stable metal-oxide TFTs for flat-panel displays. (C) 2013 AIP Publishing LLC.
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