Journal
APPLIED PHYSICS LETTERS
Volume 102, Issue 24, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4811555
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Funding
- France-China NSFC-ANR research project SPINMAN [10911130356]
- CAS [2011T1J37]
- National Basic Research Program of China [2009CB930502]
- National Science Foundation of China [10774183, 10874212, 11174338]
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We demonstrate the electrical control of the electron spin relaxation in GaAs/AlGaAs multiple quantum wells grown on (111) A substrate. By embedding the wells in a NIP structure, the application of an external bias yields a large increase of the electron spin relaxation time due to the compensation of the Dresselhaus spin-splitting by the Rashba one. Depending on the direction of the applied electric field, the electron spin relaxation can be slowed-down or sped-up. It can be tuned by a factor 50 at 75K and still by a factor 2 at 250 K. (C) 2013 AIP Publishing LLC.
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