Channel access resistance effects on charge carrier mobility and low-frequency noise in a polymethyl methacrylate passivated SnO2 nanowire field-effect transistors

Channel access resistance (R-sd) effects on the charge carrier mobility (mu) and low-frequency noise (LFN) in a polymethyl-methacrylate (PMMA) passivated tin-oxide nanowire (SnO2-NW) field effect-transistor were investigated. To this end, the Y function method was employed for direct electrical parameters extraction without R-sd influence. Numerical simulation was used to evaluate gate-to-channel capacitance (C-gc) accounting for the electrostatic gate coupling effects through PMMA passivation layer. Furthermore, LFN measurements were carried out to study the SnO2/dielectrics interface. The carrier number fluctuation (CNF) noise model was found appropriate to interpret LFN data provided R-sd influence is included. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4788708]