Journal
APPLIED PHYSICS LETTERS
Volume 102, Issue 21, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4808033
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Funding
- JSPS
- Research and Development for Next-Generation Information Technology of MEXT
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We show a three terminal magnetic tunnel junction (MTJ) with a 10-nm thick channel based on an interconnection material Cu with 10% Ir doping. By applying a current density of less than 10(12) A m(-2) to the channel, depending on the current direction, switching of a MTJ defined on the channel takes place. We show that spin transfer torque (STT) plays a critical role in determining the threshold current. By assuming the spin Hall effect in the channel being the source of the STT, the lower bound of magnitude of the spin Hall angle is evaluated to be 0.03. (C) 2013 AIP Publishing LLC.
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