Journal
APPLIED PHYSICS LETTERS
Volume 102, Issue 25, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4812345
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Funding
- EPSRC [EP/H047816/1, EP/J001627/1]
- EPSRC [EP/J001627/1, EP/J003603/1, EP/H047816/1] Funding Source: UKRI
- Engineering and Physical Sciences Research Council [EP/J001627/1, EP/J003603/1, EP/H047816/1] Funding Source: researchfish
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We report on the optical characterization of non-polar a-plane InGaN quantum dots (QDs) grown by metal-organic vapor phase epitaxy using a short nitrogen anneal treatment at the growth temperature. Spatial and spectral mapping of sub-surface QDs has been achieved by cathodoluminescence at 8 K. Microphotoluminescence studies of the QDs reveal resolution limited sharp peaks with typical linewidth of 1 meV at 4.2 K. Time-resolved photoluminescence studies suggest the excitons in these QDs have a typical lifetime of 538 ps, much shorter than that of the c-plane QDs, which is strong evidence of the significant suppression of the internal electric fields. (C) 2013 AIP Publishing LLC.
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