Related references
Note: Only part of the references are listed.Bismide-nitride alloys: Promising for efficient light emitting devices in the near- and mid-infrared
S. J. Sweeney et al.
JOURNAL OF APPLIED PHYSICS (2013)
MOVPE growth of Ga(AsBi)/GaAs multi quantum well structures
P. Ludewig et al.
JOURNAL OF CRYSTAL GROWTH (2013)
Recombination mechanisms and band alignment of GaAs1-xBix/GaAs light emitting diodes
N. Hossain et al.
APPLIED PHYSICS LETTERS (2012)
The electronic band structure of GaBiAs/GaAs layers: Influence of strain and band anti-crossing
Z. Batool et al.
JOURNAL OF APPLIED PHYSICS (2012)
Tight-binding analysis of the electronic structure of dilute bismide alloys of GaP and GaAs
Muhammad Usman et al.
PHYSICAL REVIEW B (2011)
Low Temperature Dependence of Oscillation Wavelength in GaAs1-xBix Laser by Photo-Pumping
Yoriko Tominaga et al.
APPLIED PHYSICS EXPRESS (2010)
GaAs1-xBix light emitting diodes
R. B. Lewis et al.
JOURNAL OF CRYSTAL GROWTH (2009)
Effect of thermal annealing on structural and optical properties of the GaAs0.963Bi0.037 alloy
I. Moussa et al.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY (2008)
Valence band anticrossing in GaBixAs1-x
K. Alberi et al.
APPLIED PHYSICS LETTERS (2007)
Molecular beam epitaxy growth of GaAs1-xBix
S Tixier et al.
APPLIED PHYSICS LETTERS (2003)
Characteristics of semiconductor alloy GaAs1-xBix
K Oe
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS (2002)
Share Paper
