☆
4.6
Article
Electron microscopy investigations of purity of AlN interlayer in AlxGa1-xN/GaN heterostructures grown by plasma assisted molecular beam epitaxy
APPLIED PHYSICS LETTERS (2013)
Rate this paper
The primary rating indicates the level of overall quality for the paper. Secondary ratings independently reflect strengths or weaknesses of the paper.
Find the ideal target journal for your manuscript
Explore over 38,000 international journals covering a vast array of academic fields.
SearchCreate your own webinar
Interested in hosting your own webinar? Check the schedule and propose your idea to the Peeref Content Team.
Create Now