Journal
APPLIED PHYSICS LETTERS
Volume 103, Issue 26, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4844915
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Funding
- U.S. Department of Energy (DOE) [DE-EE0005314]
- National Science Foundation (NSF)
- DOE under NSF [EEC-1041895]
- Department of Defense through the National Defense Science and Engineering Graduate Fellowship Program
- Alexander von Humboldt foundation through a Feodor Lynen postdoctoral fellowship
- NSF [ECS-0335765]
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We evaluate defect concentrations and investigate the lifetime potential of p-type single-crystal kerfless silicon produced via epitaxy for photovoltaics. In gettered material, low interstitial iron concentrations (as low as (3.2 +/- 2.2) x 10(9) cm(-3)) suggest that minority-carrier lifetime is not limited by dissolved iron. An increase in gettered lifetime from <20 to >300 mu s is observed after increasing growth cleanliness. This improvement coincides with reductions in the concentration of Mo, V, Nb, and Cr impurities, but negligible change in the low area-fraction (<5%) of dislocated regions. Device simulations indicate that the high bulk lifetime of this material could support solar cell efficiencies >23%. (C) 2013 AIP Publishing LLC.
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