Journal
APPLIED PHYSICS LETTERS
Volume 103, Issue 11, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4821181
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Using spot profile analysis low energy electron diffraction, we studied the growth mode and strain state of ultra-thin epitaxial Bi2Se3(111) films grown by molecular beam epitaxy on Si(111). The first layer grows as complete quintuple layer and covers the Si substrate before the next layer nucleates. Its lateral lattice parameter is increased by 1% compared with the value of a(parallel to) = 4.136 angstrom for a 6-nm-thick film. With increasing film thickness, a continuous change of the lattice parameter is observed to an asymptotic value, which is explained by a van der Waals-like bonding between the Bi2Se3 film and the Si substrate. (C) 2013 AIP Publishing LLC.
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