Growth and band alignment of Bi2Se3 topological insulator on H-terminated Si(111) van der Waals surface

The van der Waals epitaxy of single crystalline Bi2Se3 film was achieved on hydrogen passivated Si(111) (H:Si) substrate by physical vapor deposition. Valence band structures of Bi2Se3/H:Si heterojunction were investigated by X-ray photoemission spectroscopy and ultraviolet photoemission spectroscopy. The measured Schottky barrier height at the Bi2Se3-H:Si interface was 0.31 eV. The findings pave the way for economically preparing heterojunctions and multilayers of layered compound families of topological insulators. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4792237]