Journal
APPLIED PHYSICS LETTERS
Volume 102, Issue 23, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4811271
Keywords
-
Categories
Funding
- Ontario Research Fund [03-021]
- NSERC
Ask authors/readers for more resources
The electrical stability of hydrogenated amorphous silicon thin-film transistors (a-Si:H TFTs) on flexible substrates was characterized under mechanical bending. TFT lifetime until 50% reduction in I-DS under moderate constant-voltage gate bias (<2 MV/cm gate field for 10(4) s) was estimated to be 2.56 h and 7.43 h under uniaxial applied compression and tension, respectively, compared to 4.28 h without strain. The stretched-exponential model for V-T shift in a-Si:H TFTs was fitted to measurement data and used to predict how applied strain can affect TFT lifetime in practical applications. V-T relaxation showed a logarithmic time dependence as would be expected for dielectric/interface charge detrapping. (C) 2013 AIP Publishing LLC.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available