Journal
APPLIED PHYSICS LETTERS
Volume 102, Issue 14, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4801861
Keywords
-
Categories
Funding
- University of Houston's Center for Advanced Materials and Delta Electronic Foundation
- National Science Foundation [ECCS-1247874, ECCS-1240510, DMR-0907336]
- Robert A Welch Foundation [E-1728]
- Directorate For Engineering
- Div Of Electrical, Commun & Cyber Sys [1150584, 1247874] Funding Source: National Science Foundation
Ask authors/readers for more resources
We report the electrical characteristics of field-effect transistors (FETs) with single-crystal molybdenum disulfide (MoS2) channels synthesized by chemical vapor deposition (CVD). For a bilayer MoS2 FET, the field-effect mobility is similar to 17 cm(2) V-1 s(-1) and the on/off current ratio is similar to 10(8), which are much higher than those of FETs based on CVD polycrystalline MoS2 films. By avoiding the detrimental effects of the grain boundaries and the contamination introduced by the transfer process, the quality of the CVD MoS2 atomic layers deposited directly on SiO2 is comparable to or better than the exfoliated MoS2 flakes. The result shows that CVD is a viable method to synthesize high quality MoS2 atomic layers. (C) 2013 AIP Publishing LLC
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available