4.6 Article

Comparative studies on the inorganic and organic p-type dopants in organic light-emitting diodes with enhanced hole injection

Journal

APPLIED PHYSICS LETTERS
Volume 102, Issue 15, Pages -

Publisher

AMER INST PHYSICS
DOI: 10.1063/1.4802081

Keywords

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Funding

  1. Natural Science Foundation of China [21161160446, 61036009, 61177016]
  2. National High-Tech Research Development Program [2011AA03A110]
  3. Natural Science Foundation of Jiangsu Province [BK2010003]
  4. Opened Fund of the State Key Laboratory on Integrated Optoelectronics [IOSKL2011KFJ006]
  5. Priority Academic Program Development of Jiangsu Higher Education Institutions (PAPD)

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Comparative studies on inorganic and organic electron acceptors used as p-dopants in N,N'-di(naphthalene-1-yl)-N,N'-diphenyl-benzidine (NPB) in organic light-emitting diodes (OLEDs) are carried out. It demonstrates that 1,4,5,8,9,11-hexaazatriphenylene-hexacarbonitrile (HAT-CN) doped hole-injecting layer is superior to molybdenum trioxide (MoO3) doped one in device efficiency and stability. Combining with absorption spectral measurement, the effectiveness of a p-doped NPB in OLEDs does not solely rely on the generation of charge-transfer complexes in the doped NPB. The detailed difference between MoO3 and HAT-CN as p-dopants in NPB is further investigated by evaluating the hole injection efficiency, hole barrier height, and surface morphology of the doped films. (C) 2013 AIP Publishing LLC [http://dx.doi.org/10.1063/1.4802081]

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