Journal
APPLIED PHYSICS LETTERS
Volume 102, Issue 15, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4802081
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Funding
- Natural Science Foundation of China [21161160446, 61036009, 61177016]
- National High-Tech Research Development Program [2011AA03A110]
- Natural Science Foundation of Jiangsu Province [BK2010003]
- Opened Fund of the State Key Laboratory on Integrated Optoelectronics [IOSKL2011KFJ006]
- Priority Academic Program Development of Jiangsu Higher Education Institutions (PAPD)
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Comparative studies on inorganic and organic electron acceptors used as p-dopants in N,N'-di(naphthalene-1-yl)-N,N'-diphenyl-benzidine (NPB) in organic light-emitting diodes (OLEDs) are carried out. It demonstrates that 1,4,5,8,9,11-hexaazatriphenylene-hexacarbonitrile (HAT-CN) doped hole-injecting layer is superior to molybdenum trioxide (MoO3) doped one in device efficiency and stability. Combining with absorption spectral measurement, the effectiveness of a p-doped NPB in OLEDs does not solely rely on the generation of charge-transfer complexes in the doped NPB. The detailed difference between MoO3 and HAT-CN as p-dopants in NPB is further investigated by evaluating the hole injection efficiency, hole barrier height, and surface morphology of the doped films. (C) 2013 AIP Publishing LLC [http://dx.doi.org/10.1063/1.4802081]
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