Journal
APPLIED PHYSICS LETTERS
Volume 103, Issue 19, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4829526
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Funding
- National Science Foundation [IIP-1127537]
- Judson S. Swearingen Regents Chair in Engineering at the University of Texas at Austin
- Div Of Industrial Innovation & Partnersh
- Directorate For Engineering [1127537] Funding Source: National Science Foundation
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Switching characteristics of edge and bulk device structures and an unusual backward-scan effect are investigated in SiOx-based resistive memory. Adding external resistance is found to dramatically affect reset voltage, providing insight into the unique unipolar operation. Non-edge, bulk SiOx-based devices allow flexibility in the fabrication process and hydrogen incorporation improves electroforming and device yield. A backward-scan phenomenon is examined by investigating the DC and AC pulse responses, which defines requirements for ON and OFF programming duration. Circuit-level simulation using a Verilog-A model aids device characterization and programming strategy development for future nonvolatile memory applications. (C) 2013 AIP Publishing LLC.
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