Journal
APPLIED PHYSICS LETTERS
Volume 103, Issue 16, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4825369
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Funding
- National Science Council of Taiwan [NSC 101-2628-E-007-018-MY2]
- Industrial Technology Research Institutes
- China Steel Corporation
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Thermoelectric properties of Bi-Sb-Te and Bi-Se-Te compounds with graded Ag doping profiles are reported. A junction structure with graded doping is formed in the Bi-Te based compounds through thermally driven Ag diffusion, which has demonstrated a greatly enhanced Seebeck coefficient when a thermal gradient is applied in the same direction of carrier concentration gradient. A mechanism based on the spatial variation of bandgap narrowing induced by heavy-doping effect is proposed to explain the anomalous thermoelectric property of Bi-Te based compounds with graded doping profiles. (C) 2013 AIP Publishing LLC.
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