Pulsed high-power AlGaN-cladding-free blue laser diodes on semipolar (20(2)over-bar(1)over-bar) GaN substrates

We demonstrate high-power AlGaN-cladding-free blue laser diodes (LDs) on semipolar (20 (2) over bar(1) over bar) GaN substrates with peak output powers and external quantum efficiencies (EQEs) that are comparable to state-of-the-art commercial c-plane devices. Ridge waveguide LDs were fabricated on (20 (2) over bar(1) over bar) GaN substrates using InGaN waveguiding layers and GaN cladding layers. The devices lased at 454 nm at room temperature. We measured an output power of 2.15 W, an EQE of 39%, and a differential quantum efficiency of 49% from a single facet with a pulsed drive current (current density) of 2.02 A (28.1 kA/cm(2)). (C) 2013 AIP Publishing LLC.