Journal
APPLIED PHYSICS LETTERS
Volume 103, Issue 11, Pages -Publisher
AIP Publishing
DOI: 10.1063/1.4821191
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Funding
- EU [FP7-SPA-2010-263044]
- Spanish Government [MAT2011-29255-C02-02, TEC2010-21574-C02-02]
- Catalan Authority [2009SGR235]
- UCC
- Science Foundation Ireland [07.SK.B1232a-STTF11]
- Irish Research Council New Foundations
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Porous GaN layers are grown on silicon from gold or platinum catalyst seed layers, and self-catalyzed on epitaxial GaN films on sapphire. Using a Mg-based precursor, we demonstrate p-type doping of the porous GaN. Electrical measurements for p-type GaN on Si show Ohmic and Schottky behavior from gold and platinum seeded GaN, respectively. Ohmicity is attributed to the formation of a Ga2Au intermetallic. Porous p-type GaN was also achieved on epitaxial n-GaN on sapphire, and transport measurements confirm a p-n junction commensurate with a doping density of similar to 10(18) cm(-3). Photoluminescence and cathodoluminescence confirm emission from Mg-acceptors in porous p-type GaN. (C) 2013 AIP Publishing LLC.
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