Journal
APPLIED PHYSICS LETTERS
Volume 103, Issue 12, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4821855
Keywords
-
Categories
Funding
- Samsung Electronics
- Korean Ministry of Industry, Trade, and Resources under the National Research Project of Phase-Change Random Access Memory Development
Ask authors/readers for more resources
Crystallization temperatures, activation energies, and thermal diffusivities of In3Sb1Te2 (IST) and Ge2Sb2Te5 (GST) are investigated with a differential scanning calorimetry, a xenon laser flash, and a transmission electron microscopy. The activation energies for crystallizing the IST and the GST are 5.2 eV and 3.31 eV, respectively. The thermal diffusivity of the IST is about a half of the GST. The thermal diffusion length in the IST-phase change random access memory cell is relatively shorter than the GST due to lower thermal diffusivity. Experimental results reveal that the IST is more thermally stable than the GST. (C) 2013 AIP Publishing LLC.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available