Journal
APPLIED PHYSICS LETTERS
Volume 103, Issue 6, Pages -Publisher
AIP Publishing
DOI: 10.1063/1.4817940
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Funding
- Nanotechnology Platform by the Ministry of Education, Culture, Sports, Science and Technology [24226007]
- SCOPE (Strategic Information and Communications R&D Promotion Programme) from the Ministry of Internal Affairs and Communications, and nano-macro materials, devices, and systems alliance
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We report on the experimental demonstration of a single-photon source based on an InAs quantum dot (QD) on InP grown by molecular-beam epitaxy emitting in the telecommunication band. We develop a method to reduce the QD density to prevent inter-dot coupling via tunneling through coupled excited states. A single InAs QD embedded in an as-etched pillar structure exhibits intense and narrow emission lines. Photon antibunching is clearly observed using superconducting single-photon detectors with high sensitivity, and further improvement of the generated single-photon purity is demonstrated with below-barrier-bandgap excitation. (C) 2013 AIP Publishing LLC.
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