Journal
APPLIED PHYSICS LETTERS
Volume 103, Issue 7, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4818754
Keywords
-
Categories
Funding
- Minnesota Partnership for Biotechnology and Medical Genomics
- NSF through the MRSEC program
Ask authors/readers for more resources
Graphene field effect transistors and capacitors that employ ultra-thin atomic layer deposited high-kappa TiO2 dielectrics are demonstrated. Of the three TiO2 gate insulation schemes employed, the sequentially deposited HfO2:TiO2 gate insulator stack enabled the reduction of equivalent oxide thickness while simultaneously providing an ultra-thin gate insulation layer that minimized gate leakage current. The multilayer gate insulation scheme demonstrates a means for advanced device scaling in graphene-based devices. (C) 2013 AIP Publishing LLC.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available