Journal
APPLIED PHYSICS LETTERS
Volume 102, Issue 25, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4812201
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Funding
- National Science Centre [02950]
- National Centre for Research and Development [IT13426, INNOTECH 157829]
- European Union [230765]
- European Union
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We demonstrate ultra-violet laser diodes emitting at 388 nm grown by plasma-assisted molecular beam epitaxy on semipolar (20 (2) over bar1)GaN substrates under metal-rich conditions. The threshold current density and voltage of 13.2 kA/cm(2) and 10.8 V were measured at room temperature for devices with the laser ridge waveguide oriented along the [(1) over bar2 (1) over bar0] direction. We show smooth, atomically flat surface morphology after growth. The excellent structural quality of the laser heterostructure was corroborated by transmission electron microscopy. (C) 2013 AIP Publishing LLC.
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