Journal
APPLIED PHYSICS LETTERS
Volume 102, Issue 11, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4796136
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Funding
- National Natural Science Foundation of China [11074001]
- Scientific Research Foundation for the Returned Overseas Chinese Scholars from the State Education Ministry
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We herein reported the dielectric properties of ZnO single crystals, and three dielectric anomalies were found. The first anomaly shows a relaxor-like behavior. It is composed of two oxygen-vacancy-related relaxation processes: a dipolar relaxation related to the hopping motions of single-ionized oxygen vacancies and a Maxwell-Wagner relaxation as the defects were blocked by the interfaces of sample/electrode contacts. The second anomaly behaves as a phase-transition-like behavior. It is ascribed to the distribution state transition for oxygen vacancies from static disorder to dynamic disorder. The third anomaly exhibits a relaxor-like behavior. It is an artificial effect caused by negative capacitance. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4796136]
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