Bias stress effect in polyelectrolyte-gated organic field-effect transistors

A main factor contributing to bias stress instability in organic transistors is charge trapping of mobile carriers near the gate insulator-semiconductor interface into localized electronic states. In this paper, we study the bias stress behavior in low-voltage (p-type) polyelectrolyte-gated organic field effect transistors (EGOFETs) at various temperatures. Stressing and recovery in these EGOFETs are found to occur six orders of magntiude faster than typical bias stress/recovery reported for dielectric-gated OFETs. The mechanism proposed for EGOFETs involves an electron transfer reaction between water and the charged semiconductor channel that promotes the creation of extra protons diffusing into the polyelectrolyte. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4798512]