Journal
APPLIED PHYSICS LETTERS
Volume 102, Issue 3, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4789437
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- NEDO
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The profiles and current-voltage characteristics of phosphorus (P)-and/or sulfur (S)-introduced Ge and NiGe/Ge have been investigated to clarify the mechanism of Schottky barrier height (SBH) modulation. For NiGe/nGe (NiGe/pGe), the introduction of P and the co-introduction of P and S effectively reduced (increased) SBH, which is explained by the properties of S acting as an n-type dopant with deep donor levels in Ge. In modulating the SBH, the co-introduction was the most effective. It is probably related to the fact that a higher increase in electron concentrations was observed in S and P co-introduced Ge than in P-introduced Ge. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4789437]
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