Journal
NANO LETTERS
Volume 4, Issue 10, Pages 1987-1990Publisher
AMER CHEMICAL SOC
DOI: 10.1021/nl0487267
Keywords
-
Ask authors/readers for more resources
We present results of ideal epitaxial nucleation and growth of III-V semiconductor nanowires on silicon substrates. This addresses the long-time challenge of integrating high performance III-V semiconductors with mainstream Si technology. Efficient room-temperature generation of light on silicon is demonstrated by the incorporation of double heterostructure segments in such nanowires. We expect that advanced heterostructure devices, such as resonant tunneling diodes, superiattice device structures, and heterostructure photonic devices for on-chip communication, could now become available as complementary device technologies for integration with silicon.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available