Journal
APPLIED PHYSICS LETTERS
Volume 102, Issue 11, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4798265
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Funding
- Converging Research Center Program through the National Research Foundation (NRF) of Korea [2012K001299]
- Global Research Laboratory program through the National Research Foundation (NRF) of Korea [2012040157]
- National Research Foundation of Korea [2012K1A1A2040157, 2010-50170, R31-2012-000-10075-0] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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The effects of forming gas annealing (FGA) on the ferroelectric properties of Hf0.5Zr0.5O2 (HZO) films were examined. Although the H-incorporation during FGA degrades the ferroelectric properties of Hf0.5Zr0.5O2 films, the degree of degradation was much lower compared with other ferroelectrics, such as Pb(Zr,Ti)O-3. Pt worked as a catalyst for H-incorporation, and maximum 2P(r) loss of similar to 40% occurred. However, the insertion of a similar to 20-nm-thick TiN layer between Pt and Hf0.5Zr0.5O2 decreased the degradation to similar to 12%. Hf0.5Zr0.5O2 is more resistant to degradation by FGA compared with the conventional ferroelectrics, which is a highly promising result for next-generation ferroelectric memory. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4798265]
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